inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon pnp power transistor 2SA982 description high power dissipation- : p c = 80w(max.)@t c =25 collector-emitter breakdown voltage- : v (br)ceo = -140v(min.) complement to type 2sc2262 applications designed for general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -140 v v ceo collector-emitter voltage -140 v v ebo emitter-base voltage -6 v i c collector current-continuous -8 a i b base current-continuous -3 a p c collector power dissipation @t c =25 80 w t j junction temperature 150 t stg storage temperature -65~150
inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon pnp power transistor 2SA982 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -50ma ;i b = 0 -140 v v ce (sat) collector-emitter saturation voltage i c = -3a; i b = -0.3a -1.5 v i cbo collector cutoff current v cb = -140v; i e = 0 -1.0 ma i ebo emitter cutoff current v eb = -6v; i c = 0 -1.0 ma h fe dc current gain i c = -3a; v ce = -4v 30 f t current-gain?bandwidth product i e = 0.5a; v ce = -12v 20 mhz switching times t r rise time 0.85 s t stg storage time 2.0 s t f fall time i c = -3a ,r l = 4 , v cc = -12v i b1 = -0.2a; i b2 = 0.1a 0.3 s
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